SIC DIODE 1200V 15A TO-247-2
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
Diode Type: | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): | 1200 V |
Current - Average Rectified (Io): | 75A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.8 V @ 15 A |
Speed: | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr): | 0 ns |
Current - Reverse Leakage @ Vr: | 14 µA @ 1200 V |
Capacitance @ Vr, F: | 1089pF @ 1V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | TO-247-2 |
Supplier Device Package: | TO-247-2 |
Operating Temperature - Junction: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
ES15DLW RVGTSC (Taiwan Semiconductor) |
DIODE, SUPER FAST |
|
B5818WS-F2-0000HF |
DIODE SCHOTTKY 30V 1A SOD323 |
|
RA354Diotec Semiconductor |
DIODE STD BUTTON 400V 35A |
|
FR20GAD2Diotec Semiconductor |
DIODE SFR D2PAK 400V 20A |
|
VSS8D5M6HM3/IVishay General Semiconductor – Diodes Division |
5A, 60V, SLIMSMAW TRENCH SKY REC |
|
STTH30RQ06WLSTMicroelectronics |
600 V, 30 A SOFT ULTRAFAST RECOV |
|
D3501N42TVFXPSA1IR (Infineon Technologies) |
HIGH POWER THYR / DIO |
|
BYS11-90-M3/TRVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 90V 1.5A DO214AC |
|
ER2DTRSMC Diode Solutions |
DIODE GEN PURP 200V 2A SMB |
|
RB160LAM-90TFTRROHM Semiconductor |
AUTOMOTIVE SCHOTTKY BARRIER DIOD |
|
VS-40HFLR60S05Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 40A DO203AB |
|
BYM10-600HE3/96Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 1A DO213AB |
|
SURS8260T3GSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 600V 2A SMB |