CAP TANT 330UF 20% 4V 2812
DIODE GP 2.8KV 540A DO200AA
FIXED IND 5.6MH 56MA 53 OHM TH
SWITCH SNAP ACT SPST-NC 6A 125V
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 2800 V |
Current - Average Rectified (Io): | 540A |
Voltage - Forward (Vf) (Max) @ If: | 2.08 V @ 1500 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 15 mA @ 2800 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Clamp On |
Package / Case: | DO-200AA, A-PUK |
Supplier Device Package: | DO-200AA, A-PUK |
Operating Temperature - Junction: | - |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BAT54-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 30V 200MA SOT23 |
|
M1MA151KT1Rochester Electronics |
DIODE GEN PURP 40V 100MA SC59 |
|
BAQ34-GS18Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 60V 200MA SOD80 |
|
VS-25F40Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 25A DO203AA |
|
LS4148-GS08Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 75V 150MA SOD80 |
|
1N5407-E3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 3A DO201AD |
|
HS3F V6GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 300V 3A DO214AB |
|
ES2CAHR3GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 150V 2A DO214AC |
|
244NQ035-1SMC Diode Solutions |
DIODE SCHOTTKY 35V 240A PRM1-1 |
|
S2MSMA-AQDiotec Semiconductor |
DIODE STD SMA 1000V 2A |
|
RL1N1500FRectron USA |
DIODE GEN PURP 1500V 1A A405 |
|
ES2DHE3_A/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 2A DO214AA |
|
S2K-E3/52TVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 1.5A DO214AA |