DIODE GEN PURP 400V 1A DO41
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400 V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.1 V @ 1 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 2 µs |
Current - Reverse Leakage @ Vr: | 5 µA @ 400 V |
Capacitance @ Vr, F: | 15pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-41 |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SSC53L-M3/9ATVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 5A 30V DO-214AB |
|
JAN1N649-1Roving Networks / Microchip Technology |
DIODE GEN PURP 600V 400MA DO35 |
|
VS-10ETS12STRL-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.2KV 10A D2PAK |
|
S1D-E3/61TVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A DO214AC |
|
RB168VYM-30FHTRROHM Semiconductor |
SCHOTTKY BARRIER DIODE |
|
SS10P4-M3/87AVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 40V 10A TO277A |
|
NTS10100EMFST1GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 100V 10A 5DFN |
|
VS-MBRB1635TRR-M3Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 35V 16A TO263AB |
|
MURS360S-M3/5BTVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 3A DO214AA |
|
VS-12TQ035STRL-M3Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 35V 15A D2PAK |
|
SR803 R0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 30V 8A DO201AD |
|
ER3M-TPMicro Commercial Components (MCC) |
DIODE GEN PURP 1KV 3A DO214AB |
|
1N4004RLGSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 400V 1A DO41 |