SIC DIODE 1200V 50A TO-247-2
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
Diode Type: | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): | 1200 V |
Current - Average Rectified (Io): | 212A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.8 V @ 50 A |
Speed: | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr): | 0 ns |
Current - Reverse Leakage @ Vr: | 40 µA @ 1200 V |
Capacitance @ Vr, F: | 3263pF @ 1V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | TO-247-2 |
Supplier Device Package: | TO-247-2 |
Operating Temperature - Junction: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
1N4448W-AQDComponents |
DIODE GEN PURP 75V 150MA SOD123F |
|
RHRD650SRochester Electronics |
RECTIFIER DIODE |
|
UC1612JRochester Electronics |
RECTIFIER DIODE, SCHOTTKY |
|
1N4004-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 1A DO204AL |
|
VS-45EPF12LHM3Vishay General Semiconductor – Diodes Division |
DIODES - TO-247-E3 |
|
PMEG40T30ERXNexperia |
DIODE SCHOTTKY 40V 3A SOD123W |
|
SE70PGHM3_A/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 2.9A TO277A |
|
VS-1N1183Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 35A DO203AB |
|
SK59BSURGE |
5A -90V - SMB (DO-214AA) - RECTI |
|
HS1MAL M3GTSC (Taiwan Semiconductor) |
75NS, 1A, 1000V, HIGH EFFICIENT |
|
VS-20MQ040NTRPBFVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 40V 2.1A DO214AC |
|
B240AF-13Zetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 40V 2A SMAF |
|
1N4003GHA0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 1A DO204AL |