CAP CER 100UF 6.3V X5R 1206
CAP CER 47PF 100V C0G/NP0 1812
DIODE GEN PURP 1.2KV 15A D2PAK
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1200 V |
Current - Average Rectified (Io): | 15A |
Voltage - Forward (Vf) (Max) @ If: | 2.1 V @ 15 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 105 ns |
Current - Reverse Leakage @ Vr: | 15 µA @ 1200 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Operating Temperature - Junction: | 175°C (Max) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SK35B-LTPMicro Commercial Components (MCC) |
DIODE SCHOTTKY 50V 3A DO214AA |
|
RS2MAHM2GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 1.5A DO214AC |
|
CGRA4002-GComchip Technology |
DIODE GEN PURP 100V 1A DO214AC |
|
S2M-F080Sanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 1KV 1.5A SMB |
|
GL34JR13Diotec Semiconductor |
DIODE STD DO-213AA 600V 0.5A |
|
SE70PD-M3/86AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 2.9A TO277A |
|
V12P15-M3/HVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 150V 12A TO277A |
|
VS-HFA04SD60SRHM3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 4A TO252 |
|
HER308G B0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 3A DO201AD |
|
VS-15ETL06-N3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 15A TO220AC |
|
BY268TAPVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.4KV 800MA SOD57 |
|
UF1MHA0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 1A DO204AL |
|
JANTX1N6628USRoving Networks / Microchip Technology |
DIODE GEN PURP 660V 1.75A D5B |