DIODE GEN PURP 200V 1A AXIAL
Type | Description |
---|---|
Series: | Military, MIL-PRF-19500/427 |
Package: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200 V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.3 V @ 3 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 2 µs |
Current - Reverse Leakage @ Vr: | 500 nA @ 200 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Through Hole |
Package / Case: | A, Axial |
Supplier Device Package: | - |
Operating Temperature - Junction: | -65°C ~ 200°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BYV13-TAPVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 400V 1.5A SOD57 |
|
BYG24J-M3/TRVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 600V 1.5A |
|
1N4148,133Rochester Electronics |
RECTIFIER DIODE |
|
S1JB R5GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 1A DO214AA |
|
ES3B V7GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 3A DO214AB |
|
RB550VA-30TRROHM Semiconductor |
DIODE SCHOTTKY 30V 1A TUMD2 |
|
1N5186Roving Networks / Microchip Technology |
DIODE GEN PURP 100V 3A AXIAL |
|
NSR05F30QNXT5GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 30V 500MA 2DSN |
|
IDH08S120Rochester Electronics |
RECTIFIER DIODE, SCHOTTKY |
|
HER305T/REIC Semiconductor, Inc. |
DIODE GEN PURP 400V 3A DO201AD |
|
SS23S-E3/61TVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 30V 2A DO214AA |
|
ESH3B V7GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 3A DO214AB |
|
SS110LW RVGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 100V 1A SOD123W |