DIODE GEN PURP 1KV 1A AXIAL
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1000 V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.1 V @ 1 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 2 µs |
Current - Reverse Leakage @ Vr: | 500 nA @ 1000 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Through Hole |
Package / Case: | Axial |
Supplier Device Package: | Axial |
Operating Temperature - Junction: | -65°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
VS-SD553C45S50LVishay General Semiconductor – Diodes Division |
DIODE GP 4.5KV 560A DO200AB |
|
SBRT20U60SP5-13Zetex Semiconductors (Diodes Inc.) |
DIODE SBR 60V 20A POWRDI5 |
|
S2A-M3/5BTVishay General Semiconductor – Diodes Division |
DIODE GPP 1.5A 50V DO-214AA |
|
RS1B-13-FZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 100V 1A SMA |
|
BYT52M-TAPVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 1KV 1.4A SOD57 |
|
SUF4005-CTDComponents |
CUT-TAPE VERSION. ULTRAFAST RECO |
|
PMEG4002ELD,315Nexperia |
DIODE SCHOT 40V 200MA DFN1006D-2 |
|
1N5819HA0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 40V 1A DO204AL |
|
AR1PK-M3/84AVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 800V 1A DO220AA |
|
BAV21W RHGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 250V 200MA SOD123 |
|
ES1JAL M3GTSC (Taiwan Semiconductor) |
35NS, 1A, 600V, SUPER FAST RECOV |
|
V35PWM10HM3/IVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 100V 35A SLIMDPAK |
|
DSEP30-06AWickmann / Littelfuse |
DIODE GEN PURP 600V 30A TO247AD |