RES 100K OHM 1W 1% AXIAL
DIODE STD D12.77X6.6W 400V 35A
SMA-SJB/TNC-SJB LMR19 3M
SWITCH SLIDE SPDT 0.4VA 20V
Type | Description |
---|---|
Series: | - |
Package: | Box |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400 V |
Current - Average Rectified (Io): | 35A |
Voltage - Forward (Vf) (Max) @ If: | 1.1 V @ 35 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 1.5 µs |
Current - Reverse Leakage @ Vr: | 100 µA @ 400 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Through Hole |
Package / Case: | DO-208AA |
Supplier Device Package: | DO-208 |
Operating Temperature - Junction: | -50°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
NTE125-10NTE Electronics, Inc. |
NTE125(10/PKG) |
|
GP02-40-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 4KV 250MA DO204 |
|
CDBW120-HFComchip Technology |
DIODE SCHOTTKY 1A 20V SOD-123 |
|
SS3P5LHM3_A/HVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 50V 3A TO277A |
|
RS2AA R3GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 1.5A DO214AC |
|
SE10PJHM3/85AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 1A DO220AA |
|
FESB8FTHE3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 300V 8A TO263AB |
|
RF101L2STE25ROHM Semiconductor |
DIODE GEN PURP 200V 1A PMDS |
|
RSFKLHR3GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 500MA SUBSMA |
|
STTH30RQ06DSTMicroelectronics |
DIODE GEN PURP 600V 30A TO220AC |
|
RF301BGE2STLROHM Semiconductor |
DIODE GEN PURP 200V 3A TO252GE |
|
SL34SMA-3GDiotec Semiconductor |
SCHOTTKY SMA 40V 3A |
|
VB30100SG-M3/8WVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 30A 100V TO-263AB |