DIODE MODULE 1000V 15A
VFQFPN 5.00X5.00X0.90 MM, 0.40MM
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
Diode Configuration: | - |
Diode Type: | - |
Voltage - DC Reverse (Vr) (Max): | 1000 V |
Current - Average Rectified (Io) (per Diode): | 15A |
Voltage - Forward (Vf) (Max) @ If: | 1.2 V @ 9 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 1 µA @ 1000 V |
Operating Temperature - Junction: | -55°C ~ 175°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | - |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
HRU0103A-JTRF-ERochester Electronics |
SCHOTTKY DIODE |
![]() |
V6KM45DUHM3/IVishay General Semiconductor – Diodes Division |
RECTIFIER BARRIER SCHOTTKY FP5X6 |
![]() |
SCPAR1Semtech |
DIODE ARRAY GP 100V 22.5A |
![]() |
M5060THA1200Sensata Technologies – Crydom |
DIODE MODULE 1.2KV 60A |
![]() |
VS-VSKD56/10Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 30A ADDAPAK |
![]() |
VS-VSKD166/12PBFVishay General Semiconductor – Diodes Division |
DIODE GEN 1.2KV 82.5A INTAPAK |
![]() |
MBR300150CTGeneSiC Semiconductor |
DIODE SCHOTTKY 150V 150A 2 TOWER |
![]() |
SBS806M-TL-ERochester Electronics |
SBD PARALLEL 0.5A 30V |
![]() |
SCDA4Semtech |
DIODE ARRAY 400V 3.75A |
![]() |
MDD312-12N1Wickmann / Littelfuse |
DIODE MODULE 1.2KV 310A Y1-CU |
![]() |
1S954-T1Rochester Electronics |
HIGH SPEED SWITCHING DIODE |
![]() |
VS-VSUD200CH60PBFVishay General Semiconductor – Diodes Division |
MODULE DIODE 200A HALFPAK |
![]() |
NXPSC20650W-AQWeEn Semiconductors Co., Ltd |
SILICON CARBIDE POWER DIODE |