DIODE SCHOTTKY 15A 45V TO-263AB
DIODE ZENER 5.6V 500MW DO35
Type | Description |
---|---|
Series: | TMBS® |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Diode Configuration: | 1 Pair Common Cathode |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 45 V |
Current - Average Rectified (Io) (per Diode): | 7.5A |
Voltage - Forward (Vf) (Max) @ If: | 630 mV @ 7.5 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 500 µA @ 45 V |
Operating Temperature - Junction: | -40°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263AB |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
MSRTA20080(A)DGeneSiC Semiconductor |
DIODE GEN PURP 800V 200A 3 TOWER |
|
STF4060CSMC Diode Solutions |
DIODE ARRAY SCHOTTKY 60V ITO220 |
|
HN1D03FTE85LFToshiba Electronic Devices and Storage Corporation |
DIODE ARRAY GP 80V 100MA SC74 |
|
APT2X100D60JRoving Networks / Microchip Technology |
DIODE MODULE 600V 100A ISOTOP |
|
S8-4148E3/TR7Roving Networks / Microchip Technology |
DIODE ARRAY GP 75V 400MA 8SOIC |
|
MURT20060GeneSiC Semiconductor |
DIODE MODULE 600V 200A 3TOWER |
|
1SS226,LFToshiba Electronic Devices and Storage Corporation |
PB-F S-MINI M8 DIODE (LF), IFM=3 |
|
RBQ20BM100AFHTLROHM Semiconductor |
LOW IR TYPE AUTOMOTIVE SCHOTTKY |
|
MBRS20200CTDiotec Semiconductor |
SCHOTTKY D2PAK 200V 20A |
|
V10DM45C-M3/IVishay General Semiconductor – Diodes Division |
DIODE ARRAY SCHOT 45V 5A TO263AC |
|
VB30202C-M3/4WVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 200V 30A TO263AB |
|
MBR2045CTE3/TURoving Networks / Microchip Technology |
DIODE SCHOTTKY 10A 45V TO220AB |
|
VS-12CWQ10FN-M3Vishay General Semiconductor – Diodes Division |
DIODE ARRAY SCHOTTKY 100V DPAK |