DIODE GEN PURP 600V 200A 3 TOWER
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
Diode Configuration: | 1 Pair Series Connection |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600 V |
Current - Average Rectified (Io) (per Diode): | 200A |
Voltage - Forward (Vf) (Max) @ If: | 1.1 V @ 200 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 10 µA @ 600 V |
Operating Temperature - Junction: | -55°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Three Tower |
Supplier Device Package: | Three Tower |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
FST16020GeneSiC Semiconductor |
DIODE MODULE 20V 160A TO249AB |
|
MSRT15080(A)DGeneSiC Semiconductor |
DIODE GEN PURP 800V 150A 3 TOWER |
|
VS-60CPU02-N3Vishay General Semiconductor – Diodes Division |
DIODE ARRAY GP 200V 30A TO247AC |
|
VS-MBRB4045CTLHM3Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 45V 20A D2PAK |
|
1SS384TE85LFToshiba Electronic Devices and Storage Corporation |
DIODE ARRAY SCHOTTKY 10V USQ |
|
BAS21UE6359HTMA1Rochester Electronics |
HIGH SPEED SWITCHING DIODE |
|
MBRB20H60CTHE3_A/IVishay General Semiconductor – Diodes Division |
DIODE ARRAY SCHOTTKY 60V TO263AB |
|
MBRT20040RGeneSiC Semiconductor |
DIODE MODULE 40V 200A 3TOWER |
|
FFPF06U20DPTURochester Electronics |
RECTIFIER DIODE |
|
VS-8CSH02HM3/87AVishay General Semiconductor – Diodes Division |
DIODE STANDARD 200V 4A TO277A |
|
RB706UM-40TLROHM Semiconductor |
RB706UM-40 IS SCHOTTKY BARRIER D |
|
BAS40-06,215Nexperia |
DIODE ARRAY SCHOTTKY 40V SOT23 |
|
BAT54SWT-TPMicro Commercial Components (MCC) |
DIODE ARRAY SCHOTTKY 30V SOT323 |