PM-DIODE-SIC-SBD-D1P
Type | Description |
---|---|
Series: | - |
Package: | Box |
Part Status: | Active |
Diode Configuration: | 1 Pair Common Cathode |
Diode Type: | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): | 1200 V |
Current - Average Rectified (Io) (per Diode): | 100A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.8 V @ 100 A |
Speed: | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr): | 0 ns |
Current - Reverse Leakage @ Vr: | - |
Operating Temperature - Junction: | -40°C ~ 175°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | D1P |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
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