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MURTA200120R

MURTA200120R

DIODE GEN 1.2KV 100A 3 TOWER

LS1020AXN7MQB

LS1020AXN7MQB

LS1 32BIT ARM SOC 1.2GHZ DDR3/

MURTA200120R

MURTA200120R

Image is for reference, please contact us to get the real picture

Part No :

MURTA200120R

Manufacturer
GeneSiC Semiconductor
Description
DIODE GEN 1.2KV 100A 3 TOWER
Catalog
Diodes - Rectifiers - Arrays
Availability
622762 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 18 - Feb 22 2025
PDF
MURTA200120R PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
Diode Configuration:1 Pair Common Anode
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1200 V
Current - Average Rectified (Io) (per Diode):100A
Voltage - Forward (Vf) (Max) @ If:2.6 V @ 100 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):-
Current - Reverse Leakage @ Vr:25 µA @ 1200 V
Operating Temperature - Junction:-55°C ~ 150°C
Mounting Type:Chassis Mount
Package / Case:Three Tower
Supplier Device Package:Three Tower
MURTA200120R is available at GangBo-ic.com, Please review product page below for detailed information, including MURTA200120R price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for MURTA200120R to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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