BRIDGE RECT 1PHASE 800V 20A GBJ
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Obsolete |
Diode Type: | Single Phase |
Technology: | Standard |
Voltage - Peak Reverse (Max): | 800 V |
Current - Average Rectified (Io): | 20 A |
Voltage - Forward (Vf) (Max) @ If: | 1.05 V @ 10 A |
Current - Reverse Leakage @ Vr: | 10 µA @ 800 V |
Operating Temperature: | -55°C ~ 150°C |
Mounting Type: | Through Hole |
Package / Case: | 4-SIP, GBJ |
Supplier Device Package: | GBJ |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
GBU4A-1M3/51Vishay General Semiconductor – Diodes Division |
BRIDGE RECT 1PHASE 50V 3A GBU |
|
GBL06L-5308E3/51Vishay General Semiconductor – Diodes Division |
BRIDGE RECT 1PHASE 600V 3A GBL |
|
100MT160PAVishay General Semiconductor – Diodes Division |
BRIDGE RECT 3P 1.6KV 100A 7MTPA |
|
KBP304G-BPMicro Commercial Components (MCC) |
BRIDGE RECT 400V 3A GBP |
|
70MT140KBVishay General Semiconductor – Diodes Division |
BRIDGE RECT 3PHASE 1.4KV 70A MTK |
|
GBL404-BPMicro Commercial Components (MCC) |
DIODE BRIDGE GBL |
|
GBL408-BPMicro Commercial Components (MCC) |
DIODE BRIDGE GBL |
|
GSIB1580-5410E3/45Vishay General Semiconductor – Diodes Division |
BRIDGE RECT 1P 800V 3.5A GSIB-5S |
|
KBP156G C2TSC (Taiwan Semiconductor) |
BRIDGE RECT 1PHASE 800V 1.5A KBP |
|
GBU8JL-5701M3/51Vishay General Semiconductor – Diodes Division |
BRIDGE RECT 1PHASE 600V 3.9A GBU |
|
111MT100KBVishay General Semiconductor – Diodes Division |
BRIDGE RECT 3PHASE 1KV 110A MTK |
|
MB05M-GComchip Technology |
BRIDGE RECT 1PHASE 50V 800MA MBM |
|
GBU8K-5M3/51Vishay General Semiconductor – Diodes Division |
BRIDGE RECT 1PHASE 800V 3.9A GBU |