BRIDGE RECT 1PHASE 600V 4.2A KBU
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
Diode Type: | Single Phase |
Technology: | Standard |
Voltage - Peak Reverse (Max): | 600 V |
Current - Average Rectified (Io): | 4.2 A |
Voltage - Forward (Vf) (Max) @ If: | 1.1 V @ 17.5 A |
Current - Reverse Leakage @ Vr: | 10 µA @ 600 V |
Operating Temperature: | -55°C ~ 125°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | 4-SIP, KBU |
Supplier Device Package: | KBU |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BR5006EIC Semiconductor, Inc. |
STD 50A, CASE TYPE: BR50 |
|
UG6KB20TBSMC Diode Solutions |
BRIDGE RECT 1PHASE 200V 6A D3K |
|
KBU1001-GComchip Technology |
BRIDGE RECT 1PHASE 100V 10A KBU |
|
BR1002EIC Semiconductor, Inc. |
STD 10A, CASE TYPE: BR10 |
|
MDMA450UB1600PTEDWickmann / Littelfuse |
BIPOLARMODULE-RECTIFIER+BRAKE E2 |
|
KBL604G T0TSC (Taiwan Semiconductor) |
BRIDGE RECT 1PHASE 400V 6A KBL |
|
UGB3132ADWickmann / Littelfuse |
BRIDGE RECT 1P 4.8KV 1.3A UGB-1 |
|
VUO30-12NO3Wickmann / Littelfuse |
BRIDGE RECT 3P 1.2KV 37A FO-F-B |
|
GBU10MGeneSiC Semiconductor |
BRIDGE RECT 1PHASE 1KV 10A GBU |
|
682-1Roving Networks / Microchip Technology |
BRIDGE RECTIFIER |
|
GBU15MGeneSiC Semiconductor |
BRIDGE RECT 1PHASE 1KV 15A GBU |
|
KBU1006G T0TSC (Taiwan Semiconductor) |
BRIDGE RECT 1PHASE 800V 10A KBU |
|
BR801EIC Semiconductor, Inc. |
STD 8A, CASE TYPE: BR10 |