BRIDGE RECT 1PHASE 800V 6A KBL
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
Diode Type: | Single Phase |
Technology: | Standard |
Voltage - Peak Reverse (Max): | 800 V |
Current - Average Rectified (Io): | 6 A |
Voltage - Forward (Vf) (Max) @ If: | 1.1 V @ 6 A |
Current - Reverse Leakage @ Vr: | 5 µA @ 800 V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | 4-SIP, KBL |
Supplier Device Package: | KBL |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
DB156GGeneSiC Semiconductor |
BRIDGE RECT 1PHASE 800V 1.5A DB |
|
GBPC5001TGeneSiC Semiconductor |
BRIDGE RECT 1PHASE 100V 50A GBPC |
|
SBMC6Semtech |
BRIDGE RECT 1PHASE 600V 1.5A |
|
469-03Roving Networks / Microchip Technology |
BRIDGE RECTIFIER |
|
VS-160MT180CVishay General Semiconductor – Diodes Division |
BRIDGE RECT 3P 1.8KV 160A MTC |
|
CBR2-L040MCentral Semiconductor |
BRIDGE RECT 1PHASE 400V 2A B-M |
|
DB101GGeneSiC Semiconductor |
BRIDGE RECT 1PHASE 50V 1A DB |
|
DLA100B1200LB-TRRWickmann / Littelfuse |
BRIDGE RECT 1P 1.2KV 132A SMPD.B |
|
GBL01-M3/45Vishay General Semiconductor – Diodes Division |
BRIDGE RECT 1PHASE 100V 4A GBL |
|
KBU806G T0TSC (Taiwan Semiconductor) |
BRIDGE RECT 1PHASE 800V 8A KBU |
|
KBL601G T0TSC (Taiwan Semiconductor) |
BRIDGE RECT 1PHASE 50V 6A KBL |
|
UG6KB05TBSMC Diode Solutions |
BRIDGE RECT 1PHASE 50V 6A D3K |
|
DLA100B800LB-TRRWickmann / Littelfuse |
BIPOLAR MODULE-BRIDGE RECTIFIER |