BRIDGE RECT 3P 1.4KV 25A V1-A
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
Diode Type: | Three Phase |
Technology: | Standard |
Voltage - Peak Reverse (Max): | 1.4 kV |
Current - Average Rectified (Io): | 25 A |
Voltage - Forward (Vf) (Max) @ If: | 1.19 V @ 10 A |
Current - Reverse Leakage @ Vr: | 10 µA @ 1400 V |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | V1-A |
Supplier Device Package: | V1-A |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
DBA40G-K20Sanyo Semiconductor/ON Semiconductor |
BRIDGE RECT 1PHASE 600V 2.6A |
|
MB1010-BPMicro Commercial Components (MCC) |
BRIDGE RECT 1PHASE 1KV 10A BR-6 |
|
3N248-M4/51Vishay General Semiconductor – Diodes Division |
BRIDGE RECT 1P 200V 1.5A KBPM |
|
GBLA06HD2GTSC (Taiwan Semiconductor) |
BRIDGE RECT 1PHASE 600V 4A GBL |
|
TS15PL06GHC2GTSC (Taiwan Semiconductor) |
BRIDGE RECT 1P 800V 15A TS-6P |
|
803-2Roving Networks / Microchip Technology |
BRIDGE RECT 1PHASE 100V MB |
|
3N249-E4/72Vishay General Semiconductor – Diodes Division |
BRIDGE RECT 1P 400V 1.5A KBPM |
|
CBR2-060Central Semiconductor |
BRIDGE RECT 1P 600V 2A A CASE |
|
3N248-E4/72Vishay General Semiconductor – Diodes Division |
BRIDGE RECT 1P 200V 1.5A KBPM |
|
DF06S/77Vishay General Semiconductor – Diodes Division |
BRIDGE RECT 1PHASE 600V 1A DFS |
|
GBU1005 D2GTSC (Taiwan Semiconductor) |
BRIDGE RECT 1PHASE 600V 10A GBU |
|
VBO160-14NO7Wickmann / Littelfuse |
BRIDGE RECT 1P 1.4KV 174A PWS-E |
|
VS-SA60BA60Vishay General Semiconductor – Diodes Division |
BRIDGE RECT 1P 600V 61A SOT227 |