BRIDGE RECT 1P 600V 2.8A GSIB-5S
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Obsolete |
Diode Type: | Single Phase |
Technology: | Standard |
Voltage - Peak Reverse (Max): | 600 V |
Current - Average Rectified (Io): | 2.8 A |
Voltage - Forward (Vf) (Max) @ If: | 950 mV @ 3 A |
Current - Reverse Leakage @ Vr: | 10 µA @ 600 V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | 4-SIP, GSIB-5S |
Supplier Device Package: | GSIB-5S |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
PB62-FZetex Semiconductors (Diodes Inc.) |
BRIDGE RECT 1PHASE 200V 6A PB-6 |
|
W08GZetex Semiconductors (Diodes Inc.) |
BRIDGE RECT 1PHASE 800V 1.5A WOG |
|
TS6P06GHC2GTSC (Taiwan Semiconductor) |
BRIDGE RECT 1PHASE 800V 6A TS-6P |
|
3N257-E4/72Vishay General Semiconductor – Diodes Division |
BRIDGE RECT 1PHASE 600V 2A KBPM |
|
MB84-BPMicro Commercial Components (MCC) |
BRIDGE RECT 1PHASE 400V 8A BR-6 |
|
TB4S-GComchip Technology |
BRIDGE RECT 1P 400V 800MA 4TBS |
|
W08M-BPMicro Commercial Components (MCC) |
BRIDGE RECT 1PHASE 800V 1.5A WOM |
|
GBJ1010Zetex Semiconductors (Diodes Inc.) |
BRIDGE RECT 1PHASE 1KV 10A GBJ |
|
TS20P03G C2GTSC (Taiwan Semiconductor) |
BRIDGE RECT 1P 200V 20A TS-6P |
|
KBP02M-M4/51Vishay General Semiconductor – Diodes Division |
BRIDGE RECT 1P 200V 1.5A KBPM |
|
MB2505Zetex Semiconductors (Diodes Inc.) |
BRIDGE RECT 1PHASE 50V 25A MB |
|
TB2S-GComchip Technology |
BRIDGE RECT 1P 200V 800MA 4TBS |
|
GBJ601Zetex Semiconductors (Diodes Inc.) |
BRIDGE RECT 1PHASE 100V 6A GBJ |