Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Obsolete |
Diode Type: | Single Phase |
Technology: | Standard |
Voltage - Peak Reverse (Max): | 800 V |
Current - Average Rectified (Io): | 10 A |
Voltage - Forward (Vf) (Max) @ If: | 1.1 V @ 5 A |
Current - Reverse Leakage @ Vr: | 10 µA @ 800 V |
Operating Temperature: | -55°C ~ 125°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | 4-Square, BR-6 |
Supplier Device Package: | BR-6 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
TS10P07GHC2GTSC (Taiwan Semiconductor) |
BRIDGE RECT 1PHASE 1KV 10A TS-6P |
|
TS15P03G C2GTSC (Taiwan Semiconductor) |
BRIDGE RECT 1P 200V 15A TS-6P |
|
GBPC1208/1Vishay General Semiconductor – Diodes Division |
BRIDGE RECT 1PHASE 800V 12A GBPC |
|
GBPC1201/1Vishay General Semiconductor – Diodes Division |
BRIDGE RECT 1PHASE 100V 12A GBPC |
|
TS20P03GHD2GTSC (Taiwan Semiconductor) |
BRIDGE RECT 1P 200V 20A TS-6P |
|
GBU406HD2GTSC (Taiwan Semiconductor) |
BRIDGE RECT 1PHASE 800V 4A GBU |
|
3N259-E4/72Vishay General Semiconductor – Diodes Division |
BRIDGE RECT 1PHASE 1KV 2A KBPM |
|
G3SBA20L-M3/51Vishay General Semiconductor – Diodes Division |
BRIDGE RECT 1PHASE 200V 2.3A GBU |
|
GBJ1501Zetex Semiconductors (Diodes Inc.) |
BRIDGE RECT 1PHASE 100V 15A GBJ |
|
VSIB680-E3/45Vishay General Semiconductor – Diodes Division |
BRIDGE RECT 1P 800V 2.8A GSIB-5S |
|
CBRLD1-08 TR13Central Semiconductor |
BRIDGE RECT 1P 800V 1A 4LPDIP |
|
MSD52-16Microsemi |
BRIDGE RECT 3PHASE 1.6KV 50A SM2 |
|
TS15P01GHD2GTSC (Taiwan Semiconductor) |
BRIDGE RECT 1PHASE 50V 15A TS-6P |