Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
Diode Type: | Single Phase |
Technology: | Silicon Carbide Schottky |
Voltage - Peak Reverse (Max): | 1.2 kV |
Current - Average Rectified (Io): | 10 A |
Voltage - Forward (Vf) (Max) @ If: | 1.8 V @ 10 A |
Current - Reverse Leakage @ Vr: | 200 µA @ 1200 V |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SOT-227-4, miniBLOC |
Supplier Device Package: | SOT-227 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
3N246-M4/51Vishay General Semiconductor – Diodes Division |
BRIDGE RECT 1PHASE 50V 1.5A KBPM |
|
TS10KL80HD3GTSC (Taiwan Semiconductor) |
BRIDGE RECT 1PHASE 800V 10A KBJL |
|
2KBP06M-E4/72Vishay General Semiconductor – Diodes Division |
BRIDGE RECT 1PHASE 600V 2A KBPM |
|
TS15P04G C2GTSC (Taiwan Semiconductor) |
BRIDGE RECT 1P 400V 15A TS-6P |
|
G5SBA20L-M3/45Vishay General Semiconductor – Diodes Division |
BRIDGE RECT 1PHASE 200V 2.8A GBU |
|
MB2505-FZetex Semiconductors (Diodes Inc.) |
BRIDGE RECT 1PHASE 50V 25A MB |
|
KBP04M-E4/45Vishay General Semiconductor – Diodes Division |
BRIDGE RECT 1P 400V 1.5A KBPM |
|
TSS4B04G C2GTSC (Taiwan Semiconductor) |
BRIDGE RECT 1PHASE 400V 4A TS4B |
|
GBPC1506W/1Vishay General Semiconductor – Diodes Division |
BRIDGE RECT 1P 600V 15A GBPC-W |
|
MSD30-16Microsemi |
BRIDGE RECT 3PHASE 1.6KV 30A MSD |
|
100MT160PBVishay General Semiconductor – Diodes Division |
BRIDGE RECT 3P 1.6KV 100A 7MTPB |
|
TS6P06G D2GTSC (Taiwan Semiconductor) |
BRIDGE RECT 1PHASE 800V 6A TS-6P |
|
TS8P02G D2GTSC (Taiwan Semiconductor) |
BRIDGE RECT 1PHASE 100V 8A TS-6P |