RECT BRIDGE 600V 4A GBP
CMOS IMAGE SENSOR
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
Diode Type: | Single Phase |
Technology: | Standard |
Voltage - Peak Reverse (Max): | 600 V |
Current - Average Rectified (Io): | 4 A |
Voltage - Forward (Vf) (Max) @ If: | 1 V @ 2 A |
Current - Reverse Leakage @ Vr: | 5 µA @ 600 V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | 4-SIP, GBP |
Supplier Device Package: | GBP |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
VUO25-18NO8Wickmann / Littelfuse |
BRIDGE RECT 3P 1.8KV 25A PWS-E1 |
|
GBU2508-B1-0000 |
RECT BRIDGE 800V 25A GBU |
|
D10JB100-B1-0000 |
RECT BRIDGE 1000V 10A JB |
|
Z4GP208-HFComchip Technology |
BRIDGE RECT 1PHASE 800V 2A ABS |
|
B80C1000G-E4/51Vishay General Semiconductor – Diodes Division |
BRIDGE RECT 1PHASE 125V 1A WOG |
|
ABS2 RGGTSC (Taiwan Semiconductor) |
BRIDGE RECT 1P 200V 800MA ABS |
|
NTE5327WNTE Electronics, Inc. |
R-SI BRIDGE 800V 25A |
|
GBPC40005 T0GTSC (Taiwan Semiconductor) |
BRIDGE RECT 1P 50V 40A GBPC40 |
|
VS-160MT120KPBFVishay General Semiconductor – Diodes Division |
BRIDGE RECT 3P 1.2KV 160A MT-K |
|
GBL4GSURGE |
4A -400V - GBL - BRIDGE |
|
GBPC3504W T0GTSC (Taiwan Semiconductor) |
BRIDGE RECT 1P 400V 35A GBPC-W |
|
DBLS204GHRDGTSC (Taiwan Semiconductor) |
BRIDGE RECT 1PHASE 400V 2A DBLS |
|
GBU4K-BPMicro Commercial Components (MCC) |
BRIDGE RECT 1PHASE 800V 4A GBU |