BRIDGE RECT 1P 600V 10A BU
Type | Description |
---|---|
Series: | - |
Package: | Tray |
Part Status: | Active |
Diode Type: | Single Phase |
Technology: | Standard |
Voltage - Peak Reverse (Max): | 600 V |
Current - Average Rectified (Io): | 10 A |
Voltage - Forward (Vf) (Max) @ If: | 1.1 V @ 5 A |
Current - Reverse Leakage @ Vr: | 10 µA @ 600 V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | 4-SIP, BU |
Supplier Device Package: | isoCINK+™ BU |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
GBJ3510-BPMicro Commercial Components (MCC) |
BRIDGE RECT 1PHASE 1KV 35A GBJ |
|
DF04S-GComchip Technology |
BRIDGE RECT 1PHASE 400V 1A DFS |
|
KBPC25005-GComchip Technology |
BRIDGE RECT 1PHASE 50V 25A KBPC |
|
KBL08Rochester Electronics |
BRIDGE RECTIFIER DIODE |
|
DF08M-E3/45Vishay General Semiconductor – Diodes Division |
BRIDGE RECT 1PHASE 800V 1A DFM |
|
PB610-BPMicro Commercial Components (MCC) |
BRIDGE RECT 1PHASE 1KV 6A PB-6 |
|
KBPC5010TGeneSiC Semiconductor |
BRIDGE RECT 1P 1KV 50A KBPC-T |
|
BU1510-E3/45Vishay General Semiconductor – Diodes Division |
BRIDGE RECT 1P 1KV 3.4A BU |
|
2W10G-E4/51Vishay General Semiconductor – Diodes Division |
BRIDGE RECT 1PHASE 1KV 2A WOG |
|
GBUE2560-M3/PVishay General Semiconductor – Diodes Division |
BRIDGE RECT 1PHASE 600V 4.9A GBU |
|
TS8P05G C2GTSC (Taiwan Semiconductor) |
BRIDGE RECT 1PHASE 600V 8A TS-6P |
|
GBPC3501 T0GTSC (Taiwan Semiconductor) |
BRIDGE RECT 1PHASE 100V 35A GBPC |
|
RS602Rectron USA |
BRIDGE RECT GLASS 100V 6A RS-6L |