Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
Diode Type: | Single Phase |
Technology: | Standard |
Voltage - Peak Reverse (Max): | 50 V |
Current - Average Rectified (Io): | 8 A |
Voltage - Forward (Vf) (Max) @ If: | 1.05 V @ 8 A |
Current - Reverse Leakage @ Vr: | 500 nA @ 50 V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | 4-SIP, RS-8M |
Supplier Device Package: | RS-8M |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
DF1506S-TZetex Semiconductors (Diodes Inc.) |
BRIDGE RECT 1P 600V 1.5A DF-S |
|
GBU8A-BPMicro Commercial Components (MCC) |
BRIDGE RECT 1PHASE 50V 8A GBU |
|
TS10P05G D2GTSC (Taiwan Semiconductor) |
BRIDGE RECT 1P 600V 10A TS-6P |
|
GBJ3501-BPMicro Commercial Components (MCC) |
BRIDGE RECT 1PHASE 100V 35A GBJ |
|
VS-130MT80KPBFVishay General Semiconductor – Diodes Division |
BRIDGE RECT 3P 800V 130A MT-K |
|
RS1005M-C-LVRectron USA |
BRDGE RT GLASS LV 600V 10A RS10M |
|
KBPC25010TGeneSiC Semiconductor |
BRIDGE RECT 1P 1KV 25A KBPC-T |
|
GSIB6A20N-M3/45Vishay General Semiconductor – Diodes Division |
BRIDGE RECT 1P 200V 15A GSIB-5S |
|
GBU806GTBSMC Diode Solutions |
BRIDGE RECT 1PHASE 600V 8A GBU |
|
TS15P06G D2GTSC (Taiwan Semiconductor) |
BRIDGE RECT 1P 800V 15A TS-6P |
|
B250C800DM-E3/45Vishay General Semiconductor – Diodes Division |
BRIDGE RECT 1P 400V 900MA DFM |
|
GBU4DSanyo Semiconductor/ON Semiconductor |
BRIDGE RECT 1PHASE 200V 4A GBU |
|
GBPC5004M T0GTSC (Taiwan Semiconductor) |
BRIDGE RECT 1P 400V 50A GBPC40-M |