BRIDGE RECT 1PHASE 600V 25A GBJ
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
Diode Type: | Single Phase |
Technology: | Standard |
Voltage - Peak Reverse (Max): | 600 V |
Current - Average Rectified (Io): | 25 A |
Voltage - Forward (Vf) (Max) @ If: | 1.05 V @ 12.5 A |
Current - Reverse Leakage @ Vr: | 10 µA @ 600 V |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | 4-SIP, GBJ |
Supplier Device Package: | GBJ |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
RS1503MRectron USA |
BRIDGE RECT GLASS 200V 15A RS15M |
|
BU1008-E3/51Vishay General Semiconductor – Diodes Division |
BRIDGE RECT 1P 800V 3.2A BU |
|
YBS2206G RAGTSC (Taiwan Semiconductor) |
BRIDGE RECT 1PHASE 800V 2.2A YBS |
|
BU1508-M3/45Vishay General Semiconductor – Diodes Division |
BRIDGE RECT 1P 800V 15A BU |
|
APT40DR160HJRoving Networks / Microchip Technology |
BRIDGE RECT 1P 1.6KV 40A SOT227 |
|
NTE5740NTE Electronics, Inc. |
3 PHASE BRIDGE MODULE |
|
B500C5000ADiotec Semiconductor |
1PH BRIDGE 30X20X3.6 1000V 5A |
|
KBP201G-GComchip Technology |
BRIDGE RECT 1PHASE 100V 2A KBP |
|
DBLS103GHRDGTSC (Taiwan Semiconductor) |
BRIDGE RECT 1PHASE 200V 1A DBLS |
|
KBPC25005W-GComchip Technology |
BRIDGE RECT 1P 50V 25A KBPC-W |
|
GBPC35005M T0GTSC (Taiwan Semiconductor) |
BRIDGE RECT 1P 50V 35A GBPC-M |
|
DB107STRSMC Diode Solutions |
BRIDGE RECT 1PHASE 1KV 1A DB-S |
|
GBU6DSanyo Semiconductor/ON Semiconductor |
BRIDGE RECT 1PHASE 200V 6A GBU |