BRIDGE RECT 1PHASE 600V 15A GBU
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
Diode Type: | Single Phase |
Technology: | Standard |
Voltage - Peak Reverse (Max): | 600 V |
Current - Average Rectified (Io): | 15 A |
Voltage - Forward (Vf) (Max) @ If: | 900 mV @ 7.5 A |
Current - Reverse Leakage @ Vr: | 5 µA @ 600 V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | 4-SIP, GBU |
Supplier Device Package: | GBU |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
KBPC3501W-GComchip Technology |
BRIDGE RECT 1P 100V 35A KBPC-W |
|
VS-2KBP04Vishay General Semiconductor – Diodes Division |
BRIDGE RECT 1PHASE 400V 2A D-44 |
|
BR104GeneSiC Semiconductor |
BRIDGE RECT 1P 400V 10A BR-10 |
|
GBU806-B1-0000 |
RECT BRIDGE 600V 8A GBU |
|
MP1505Rectron USA |
BRIDGE RECT GLASS 50V 15A MP-15 |
|
VS-GBPC3508WVishay General Semiconductor – Diodes Division |
BRIDGE RECT 1P 800V 35A GBPC-W |
|
GBL2MSURGE |
2A -1000V - GBL - BRIDGE |
|
VS-KBPC808PBFVishay General Semiconductor – Diodes Division |
BRIDGE RECT 1PHASE 800V 8A D-72 |
|
GBLA06-E3/51Vishay General Semiconductor – Diodes Division |
BRIDGE RECT 1PHASE 600V 3A GBL |
|
DBLS206G C1GTSC (Taiwan Semiconductor) |
BRIDGE RECT 1PHASE 800V 2A DBLS |
|
NTE5322NTE Electronics, Inc. |
R-SI BRIDGE 200V 25A |
|
LDB103SRectron USA |
BRIDGE RECT GLASS 200V 1A DB-LS |
|
VS-36MT120Vishay General Semiconductor – Diodes Division |
BRIDGE RECT 3P 1.2KV 35A D-63 |