1PH BRIDGE 30X20X3.6 50V 35A
Type | Description |
---|---|
Series: | - |
Package: | Box |
Part Status: | Active |
Diode Type: | Single Phase |
Technology: | Standard |
Voltage - Peak Reverse (Max): | 50 V |
Current - Average Rectified (Io): | 5 A |
Voltage - Forward (Vf) (Max) @ If: | 1.1 V @ 17.5 A |
Current - Reverse Leakage @ Vr: | 5 µA @ 50 V |
Operating Temperature: | -50°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | 4-SIP, GBI |
Supplier Device Package: | GBI |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
GBJ1008TBSMC Diode Solutions |
BRIDGE RECT 1PHASE 800V 10A GBJ |
|
GBU4005TBSMC Diode Solutions |
BRIDGE RECT 1PHASE 50V 4A GBU |
|
KBPC3502WPDiotec Semiconductor |
1PH BRIDGE KBPC 200V 35A |
|
B80S2A-SLIMDiotec Semiconductor |
1PH BRIDGE SO-DIL 160V 2.3A |
|
VS-2KBP06Vishay General Semiconductor – Diodes Division |
BRIDGE RECT 1PHASE 600V 2A D-44 |
|
NTE5307NTE Electronics, Inc. |
R-SI BRG 1KV 1.5A |
|
VS-KBPC606PBFVishay General Semiconductor – Diodes Division |
BRIDGE RECT 1PHASE 600V 6A D-72 |
|
VUO80-16NO1Wickmann / Littelfuse |
BRIDGE RECT 3P 1.6KV 82A V1-A |
|
B2S-GComchip Technology |
BRIDGE RECT 1P 200V 800MA MBS |
|
VS-100MT160PBPBFVishay General Semiconductor – Diodes Division |
BRIDGE RECT 3P 1.6KV 100A 7-MTPB |
|
RS1001MRectron USA |
BRIDGE RECT GLASS 50V 10A RS10M |
|
GBJ1004-GComchip Technology |
BRIDGE RECT 1PHASE 400V 10A GBJ |
|
GBU15L06 D2GTSC (Taiwan Semiconductor) |
BRIDGE RECT 1PHASE 800V 15A GBU |