BRIDGE RECT 1P 100V 1.5A 4SDIP
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
Diode Type: | Single Phase |
Technology: | Standard |
Voltage - Peak Reverse (Max): | 100 V |
Current - Average Rectified (Io): | 1.5 A |
Voltage - Forward (Vf) (Max) @ If: | 1.1 V @ 1.5 A |
Current - Reverse Leakage @ Vr: | 5 µA @ 100 V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 4-SMD, Gull Wing |
Supplier Device Package: | 4-SDIP |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
TS25P01GHC2GTSC (Taiwan Semiconductor) |
BRIDGE RECT 1PHASE 50V 25A TS-6P |
|
BR82GeneSiC Semiconductor |
BRIDGE RECT 1PHASE 200V 8A BR-8 |
|
ABF8UTRSMC Diode Solutions |
BRIDGE RECT 1PHASE 800V 1A ABF |
|
GBU4M-M3/45Vishay General Semiconductor – Diodes Division |
BRIDGE RECT 1PHASE 1KV 4A GBU |
|
KBU4K-E4/51Vishay General Semiconductor – Diodes Division |
BRIDGE RECT 1PHASE 800V 4A KBU |
|
MSB203SRectron USA |
BRIDGE RECT GLASS 200V 2A MSBS |
|
VS-2KBB10RVishay General Semiconductor – Diodes Division |
BRIDGE RECT 1P 100V 1.9A 2KBB |
|
GBU6K-M3/51Vishay General Semiconductor – Diodes Division |
BRIDGE RECT 1PHASE 800V 6A GBU |
|
EABS1D RGGTSC (Taiwan Semiconductor) |
BRIDGE RECT 1PHASE 200V 1A ABS |
|
KBU6G-E4/51Vishay General Semiconductor – Diodes Division |
BRIDGE RECT 1PHASE 400V 6A KBU |
|
GBU6D-M3/45Vishay General Semiconductor – Diodes Division |
BRIDGE RECT 1PHASE 200V 6A GBU |
|
BU1208-E3/45Vishay General Semiconductor – Diodes Division |
BRIDGE RECT 1P 800V 3.4A BU |
|
RS1502MLSRectron USA |
BRDGE RCT GLASS 100V 15A RS10MLS |