TVS DIODE 40.2V 64.8V DO214AB
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
Type: | Zener |
Unidirectional Channels: | 1 |
Bidirectional Channels: | - |
Voltage - Reverse Standoff (Typ): | 40.2V |
Voltage - Breakdown (Min): | 44.7V |
Voltage - Clamping (Max) @ Ipp: | 64.8V |
Current - Peak Pulse (10/1000µs): | 23.5A |
Power - Peak Pulse: | 1500W (1.5kW) |
Power Line Protection: | No |
Applications: | General Purpose |
Capacitance @ Frequency: | - |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AB, SMC |
Supplier Device Package: | DO-214AB (SMC) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
1.5KE8.2AHE3_A/CVishay General Semiconductor – Diodes Division |
TVS DIODE 7.02V 12.1V 1.5KE |
|
P6SMBJ150CA-AQDiotec Semiconductor |
TVS SMB 150V 600W BI |
|
P6SMB56CA R5GTSC (Taiwan Semiconductor) |
TVS DIODE 47.8V 77V DO214AA |
|
M15KP110ARoving Networks / Microchip Technology |
TVS DIODE 110V 178V DO204AR |
|
MXLSMBG120ARoving Networks / Microchip Technology |
TVS DIODE 120V 193V DO215AA |
|
VTVS23GSMF-M3-18Vishay General Semiconductor – Diodes Division |
TVS DIODE 22.6V 38V DO219AB |
|
MSMLJ58ARoving Networks / Microchip Technology |
TVS DIODE 58V 93.6V DO214AB |
|
SM15T10CA-E3/9ATVishay General Semiconductor – Diodes Division |
TVS DIODE 8.55V 14.5V DO214AB |
|
SMCJ58A V6GTSC (Taiwan Semiconductor) |
TVS DIODE 58V 93.6V DO214AB |
|
MXLSMLJ64ARoving Networks / Microchip Technology |
TVS DIODE 64V 103V DO214AB |
|
DF2B7ASL,L3FToshiba Electronic Devices and Storage Corporation |
TVS DIODE 5.5V 20V SL2 |
|
SMAJ100CA M2GTSC (Taiwan Semiconductor) |
TVS DIODE 100V 162V DO214AC |
|
P6KE110AHR0GTSC (Taiwan Semiconductor) |
TVS DIODE 94V 152V DO204AC |