TVS DIODE 130V 208.3V P600
Type | Description |
---|---|
Series: | 15KPA |
Package: | Bulk |
Part Status: | Active |
Type: | Zener |
Unidirectional Channels: | 1 |
Bidirectional Channels: | - |
Voltage - Reverse Standoff (Typ): | 130V |
Voltage - Breakdown (Min): | 145.2V |
Voltage - Clamping (Max) @ Ipp: | 208.3V |
Current - Peak Pulse (10/1000µs): | 72.5A |
Power - Peak Pulse: | 15000W (15kW) |
Power Line Protection: | No |
Applications: | General Purpose |
Capacitance @ Frequency: | - |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | P600, Axial |
Supplier Device Package: | P600 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
P4SMA75CAHM2GTSC (Taiwan Semiconductor) |
TVS DIODE 64.1V 103V DO214AC |
|
MXLRT100KP58CARoving Networks / Microchip Technology |
TVS DIODE 58V 114V CASE 5A |
|
MXSMBG5.0CARoving Networks / Microchip Technology |
TVS DIODE 5V 9.2V DO215AA |
|
PGSMAJ60CAHE3GTSC (Taiwan Semiconductor) |
DIODE, TVS, BIDIRECTIONAL |
|
20KPA112-BWickmann / Littelfuse |
TVS DIODE 112V 191.1V P600 |
|
P6SMBJ6.0CADiotec Semiconductor |
TVS SMB 6V 600W BI |
|
SMBJ8.5A M4GTSC (Taiwan Semiconductor) |
TVS DIODE 8.5V 14.4V DO214AA |
|
MASMCJLCE150AE3Roving Networks / Microchip Technology |
TVS DIODE 150V 243V DO214AB |
|
1.5SMC62CA M6GTSC (Taiwan Semiconductor) |
TVS DIODE 53V 85V DO214AB |
|
MX15KP26CARoving Networks / Microchip Technology |
TVS DIODE 26V 44V CASE 5A |
|
SMDA03-6E3/TR7Roving Networks / Microchip Technology |
TVS DIODE 3.3V 9V 8SO |
|
BZW04-376HR1GTSC (Taiwan Semiconductor) |
TVS DIODE 376V 603V DO204AL |
|
MP4KE220AE3Roving Networks / Microchip Technology |
TVS DIODE 185V 328V DO204AL |