LOW NOISE HV +10KV/7W
TVS DIODE 110V 177V PLAD
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
Type: | Zener |
Unidirectional Channels: | - |
Bidirectional Channels: | 1 |
Voltage - Reverse Standoff (Typ): | 110V |
Voltage - Breakdown (Min): | 122V |
Voltage - Clamping (Max) @ Ipp: | 177V |
Current - Peak Pulse (10/1000µs): | 84A |
Power - Peak Pulse: | 15000W (15kW) |
Power Line Protection: | No |
Applications: | General Purpose |
Capacitance @ Frequency: | - |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | Nonstandard SMD |
Supplier Device Package: | PLAD |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BZW04-33BHR0GTSC (Taiwan Semiconductor) |
TVS DIODE 33.3V 53.9V DO204AL |
|
MXLSMCJLCE120ARoving Networks / Microchip Technology |
TVS DIODE 120V 193V DO214AB |
|
SMF24AHRQGTSC (Taiwan Semiconductor) |
DIODE, TVS, UNIDIRECTIONAL, 200W |
|
MXSMBJ17CAE3Roving Networks / Microchip Technology |
TVS DIODE 17V 27.6V DO214AA |
|
P6SMB12A-E3/52Vishay General Semiconductor – Diodes Division |
TVS DIODE 10.2V 16.7V DO214AA |
|
MPLAD30KP260ARoving Networks / Microchip Technology |
TVS DIODE 260V 419V PLAD |
|
MXLSMBG24ARoving Networks / Microchip Technology |
TVS DIODE 24V 38.9V DO215AA |
|
BZW04-9V4HE3/73Vishay General Semiconductor – Diodes Division |
TVS DIODE 9.4V 15.6V DO204AL |
|
TV50C850J-GComchip Technology |
TVS DIODE 85V 137V DO214AB |
|
PTVS7V0P1UTP,115Rochester Electronics |
NOW NEXPERIA PTVS7V0P1UTP - TRAN |
|
P6KE36Wickmann / Littelfuse |
TVS DIODE 30.8V 52.4V DO204AC |
|
MSMBG90ARoving Networks / Microchip Technology |
TVS DIODE 90V 146V DO215AA |
|
SJD12C15L01Yageo |
TVS DIODE |