TVS DIODE 10V 17V DO214AB
Type | Description |
---|---|
Series: | SMCJ-HRA |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Type: | Zener |
Unidirectional Channels: | - |
Bidirectional Channels: | 1 |
Voltage - Reverse Standoff (Typ): | 10V |
Voltage - Breakdown (Min): | 11.1V |
Voltage - Clamping (Max) @ Ipp: | 17V |
Current - Peak Pulse (10/1000µs): | 88.3A |
Power - Peak Pulse: | 1500W (1.5kW) |
Power Line Protection: | No |
Applications: | General Purpose |
Capacitance @ Frequency: | - |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AB, SMC |
Supplier Device Package: | DO-214AB (SMCJ) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
MXLSMCJ17AE3Roving Networks / Microchip Technology |
TVS DIODE 17V 27.6V DO214AB |
|
SMDJ36CA-HRWickmann / Littelfuse |
TVS DIODE 36V 58.1V DO214AB |
|
SMBJ16A-M3/52Vishay General Semiconductor – Diodes Division |
TVS DIODE 16V 26V DO214AA |
|
MXRT100KP85AE3Roving Networks / Microchip Technology |
TVS DIODE 85V 166V CASE 5A |
|
MAZ9062H0LPanasonic |
TVS DIODE 4V MINI3-G1 |
|
MXSMLJ17ARoving Networks / Microchip Technology |
TVS DIODE 17V 27.6V DO214AB |
|
MASMCJ26AE3Roving Networks / Microchip Technology |
TVS DIODE 26V 42.1V DO214AB |
|
SM6T24CAHE3/5BVishay General Semiconductor – Diodes Division |
TVS DIODE 20.5V 33.2V DO214AA |
|
MASMBJ22AE3Roving Networks / Microchip Technology |
TVS DIODE 22V 35.5V DO214AA |
|
TV04A260JB-GComchip Technology |
TVS DIODE 26V 42.1V SMA |
|
ATV02W800-HFComchip Technology |
TVS DIODE 80V 129V SOD123 |
|
SMA6J18AHM2GTSC (Taiwan Semiconductor) |
TVS DIODE 18V 28.3V DO214AC |
|
MSMBJ6.0CAE3Roving Networks / Microchip Technology |
TVS DIODE 6V 10.3V DO214AA |