TVS DIODE 24V 38.9V DO214AB
IC DRAM 12GBIT 200WFBGA
Type | Description |
---|---|
Series: | Military, MIL-PRF-19500 |
Package: | Bulk |
Part Status: | Active |
Type: | Zener |
Unidirectional Channels: | - |
Bidirectional Channels: | 1 |
Voltage - Reverse Standoff (Typ): | 24V |
Voltage - Breakdown (Min): | 26.7V |
Voltage - Clamping (Max) @ Ipp: | 38.9V |
Current - Peak Pulse (10/1000µs): | 38.6A |
Power - Peak Pulse: | 1500W (1.5kW) |
Power Line Protection: | No |
Applications: | General Purpose |
Capacitance @ Frequency: | - |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AB, SMC |
Supplier Device Package: | DO-214AB (SMCJ) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
P4KE9.1CA-E3/54Vishay General Semiconductor – Diodes Division |
TVS DIODE 7.78V 13.4V DO204AL |
|
SMC5K24A-M3/IVishay General Semiconductor – Diodes Division |
TVS DIODE 24V 38.9V DO214AB |
|
SM6T27ASTMicroelectronics |
TVS DIODE 23.1V 48.3V SMB |
|
NSPM3031MXT5GSanyo Semiconductor/ON Semiconductor |
TVS DIODE 3.3V 7.6V 2X2DFN |
|
SMCG10AHE3/9ATVishay General Semiconductor – Diodes Division |
TVS DIODE 10V 17V DO215AB |
|
MSMLJ16ARoving Networks / Microchip Technology |
TVS DIODE 16V 26V DO214AB |
|
SZMMBZ15VDLT1G |
TVS DIODE 12.8V 21.2V SOT23-3 |
|
SMBG36CA-E3/5BVishay General Semiconductor – Diodes Division |
TVS DIODE 36V 58.1V DO215AA |
|
BZW04-44-E3/73Vishay General Semiconductor – Diodes Division |
TVS DIODE 43.6V 70.1V DO204AL |
|
MXRT100KP350CARoving Networks / Microchip Technology |
TVS DIODE 350V 690V CASE 5A |
|
SM6T68A-M3/52Vishay General Semiconductor – Diodes Division |
TVS DIODE 58.1V 92V DO214AA |
|
MX15KP22CAE3Roving Networks / Microchip Technology |
TVS DIODE 22V 37.1V CASE 5A |
|
MA1.5KE82CARoving Networks / Microchip Technology |
TVS DIODE 70.1V 113V DO204AR |