TVS DIODE 13V 21.5V DO214AA
Type | Description |
---|---|
Series: | Military, MIL-PRF-19500 |
Package: | Bulk |
Part Status: | Active |
Type: | Zener |
Unidirectional Channels: | - |
Bidirectional Channels: | 1 |
Voltage - Reverse Standoff (Typ): | 13V |
Voltage - Breakdown (Min): | 14.4V |
Voltage - Clamping (Max) @ Ipp: | 21.5V |
Current - Peak Pulse (10/1000µs): | 27.9A |
Power - Peak Pulse: | 600W |
Power Line Protection: | No |
Applications: | General Purpose |
Capacitance @ Frequency: | - |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | SMBJ (DO-214AA) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
MXSMBJ22CARoving Networks / Microchip Technology |
TVS DIODE 22V 35.5V DO214AA |
|
MSMBG7.0ARoving Networks / Microchip Technology |
TVS DIODE 7V 12V DO215AA |
|
MXL5KP45CARoving Networks / Microchip Technology |
TVS DIODE 45V 72.7V CASE 5A |
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NUP3105LT1GSanyo Semiconductor/ON Semiconductor |
TVS DIODE 32V 66V SOT23-3 |
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MSMBJ36CARoving Networks / Microchip Technology |
TVS DIODE 36V 58.1V DO214AA |
|
SMBJ160CAE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 160V 259V DO214AA |
|
GSOT04-G3-08Vishay General Semiconductor – Diodes Division |
TVS DIODE 4V 14.3V SOT23 |
|
MXLSMBG6.0ARoving Networks / Microchip Technology |
TVS DIODE 6V 10.3V DO215AA |
|
MASMBG11CAE3Roving Networks / Microchip Technology |
TVS DIODE 11V 18.2V DO215AA |
|
5KP210AWickmann / Littelfuse |
TVS DIODE 210V 349.5V P600 |
|
SMCJ6.0CA-E3/9ATVishay General Semiconductor – Diodes Division |
TVS DIODE 6V 10.3V DO214AB |
|
TMPG06-20AHE3_A/DVishay General Semiconductor – Diodes Division |
TVS DIODE 17V 27.7V MPG06 |
|
MXSMBG110AE3Roving Networks / Microchip Technology |
TVS DIODE 110V 177V DO215AA |