TVS DIODE 120V 194.4V P600
Type | Description |
---|---|
Series: | 30KPA |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
Type: | Zener |
Unidirectional Channels: | - |
Bidirectional Channels: | 1 |
Voltage - Reverse Standoff (Typ): | 120V |
Voltage - Breakdown (Min): | 134V |
Voltage - Clamping (Max) @ Ipp: | 194.4V |
Current - Peak Pulse (10/1000µs): | 155.9A |
Power - Peak Pulse: | 30000W (30kW) |
Power Line Protection: | No |
Applications: | General Purpose |
Capacitance @ Frequency: | - |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | P600, Axial |
Supplier Device Package: | P600 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SMBJ51A-QHJ.W. Miller / Bourns |
TVS DIODE 51V 82.4V SMB |
|
SMA6J5.0CA-TRSTMicroelectronics |
TVS DIODE 5V 13.4V SMA |
|
SMBJ8.5A-QHJ.W. Miller / Bourns |
TVS DIODE AECQ |
|
MXSMCJ17ARoving Networks / Microchip Technology |
TVS DIODE 17V 27.6V DO214AB |
|
BZA856A,115Nexperia |
TVS DIODE 5.6V 5TSSOP |
|
SMAJ20CA-E3/61Vishay General Semiconductor – Diodes Division |
TVS DIODE 20V 32.4V DO214AC |
|
MPLAD6.5KP13AE3Roving Networks / Microchip Technology |
TVS DIODE 13V 21.5V PLAD |
|
1.5SMC100A M6GTSC (Taiwan Semiconductor) |
TVS DIODE 85.5V 137V DO214AB |
|
SMCJ30AHR7GTSC (Taiwan Semiconductor) |
TVS DIODE 30V 48.4V DO214AB |
|
SMBJ100CAE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 100V 162V DO214AA |
|
MSMLJ58AE3Roving Networks / Microchip Technology |
TVS DIODE 58V 93.6V DO214AB |
|
P6SMB6.8CA-F1-0000HF |
TVS DIODE 5.8V 10.5V SMB |
|
SMBJ58CAHE3_A/IVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AA |