TVS DIODE 40.2V 64.8V 1.5KE
Type | Description |
---|---|
Series: | Automotive, AEC-Q101, TransZorb® |
Package: | Tape & Box (TB) |
Part Status: | Active |
Type: | Zener |
Unidirectional Channels: | 1 |
Bidirectional Channels: | - |
Voltage - Reverse Standoff (Typ): | 40.2V |
Voltage - Breakdown (Min): | 44.7V |
Voltage - Clamping (Max) @ Ipp: | 64.8V |
Current - Peak Pulse (10/1000µs): | 23.1A |
Power - Peak Pulse: | 1500W (1.5kW) |
Power Line Protection: | No |
Applications: | Automotive |
Capacitance @ Frequency: | - |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | DO-201AA, DO-27, Axial |
Supplier Device Package: | 1.5KE |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
824500141Würth Elektronik Midcom |
TVS DIODE 14V 23.2V DO214AC |
|
MASMBG10CARoving Networks / Microchip Technology |
TVS DIODE 10V 17V DO215AA |
|
ICTE-36RL4GRochester Electronics |
TRANS VOLTAGE SUPPRESSOR DIODE |
|
JAN1N6150ARoving Networks / Microchip Technology |
TVS DIODE 16.7V 30.5V C AXIAL |
|
P6KE22CAHE3/73Vishay General Semiconductor – Diodes Division |
TVS DIODE 18.8V 30.6V DO204AC |
|
1.5SMC36CA-M3/9ATVishay General Semiconductor – Diodes Division |
TVS DIODE 30.8V 49.9V DO214AB |
|
P4SMA10CA-M3/61Vishay General Semiconductor – Diodes Division |
TVS DIODE 8.55V 14.5V DO214AC |
|
SMCJ70E3/TR13Roving Networks / Microchip Technology |
TVS DIODE 70V 125V DO214AB |
|
P6SMB47A M4GTSC (Taiwan Semiconductor) |
TVS DIODE 40.2V 64.8V DO214AA |
|
MSMCJ54AE3Roving Networks / Microchip Technology |
TVS DIODE 54V 87.1V DO214AB |
|
SPHV24-01KTGWickmann / Littelfuse |
TVS DIODE 24V 50V SOD882 |
|
SMBG85AHE3/5BVishay General Semiconductor – Diodes Division |
TVS DIODE 85V 137V DO215AA |
|
P6KE6.8CA/BYageo |
TVS DIODE |