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WNSC101200CWQ

WNSC101200CWQ

SILICON CARBIDE POWER DIODE

WNSC101200CWQ

WNSC101200CWQ

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Part No :

WNSC101200CWQ

Manufacturer
WeEn Semiconductors Co., Ltd
Description
SILICON CARBIDE POWER DIODE
Catalog
Diodes - Rectifiers - Single
Availability
10480 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
Type Description
Series:-
Package:Tube
Part Status:Active
Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):1200 V
Current - Average Rectified (Io):10A
Voltage - Forward (Vf) (Max) @ If:1.6 V @ 5 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:50 µA @ 1200 V
Capacitance @ Vr, F:250pF @ 1V, 1MHz
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247-3
Operating Temperature - Junction:175°C (Max)
WNSC101200CWQ is available at GangBo-ic.com, Please review product page below for detailed information, including WNSC101200CWQ price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for WNSC101200CWQ to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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