CAP CER 3900PF 1.5KV X7R 1825
DIODE GEN PURP 1.2KV 175A DO205
CONN HEADER VERT 8POS 2.54MM
CONN RCPT FMALE 9POS GOLD SOLDER
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
Diode Type: | Standard, Reverse Polarity |
Voltage - DC Reverse (Vr) (Max): | 1200 V |
Current - Average Rectified (Io): | 175A |
Voltage - Forward (Vf) (Max) @ If: | 1.65 V @ 470 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 1.5 µs |
Current - Reverse Leakage @ Vr: | 45 mA @ 1200 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Chassis, Stud Mount |
Package / Case: | DO-205AA, DO-8, Stud |
Supplier Device Package: | DO-205AA (DO-8) |
Operating Temperature - Junction: | -40°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
WNSC101200CWQWeEn Semiconductors Co., Ltd |
SILICON CARBIDE POWER DIODE |
![]() |
HER601G B0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 6A R-6 |
![]() |
1N6677-1Roving Networks / Microchip Technology |
RECTIFIER DIODE |
![]() |
S1MAL M3GTSC (Taiwan Semiconductor) |
1A, 1000V, STANDARD RECOVERY REC |
![]() |
SFT15G A1GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 300V 1A TS-1 |
![]() |
JANTX1N4938UR-1Roving Networks / Microchip Technology |
DIODE GEN PURP 175V 100MA DO213 |
![]() |
CMC02(TE12L,Q,M)Toshiba Electronic Devices and Storage Corporation |
DIODE GEN PURP 400V 1A M-FLAT |
![]() |
VS-52PF120Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.2KV 50A DO203AB |
![]() |
JTXV1N4246Semtech |
D MET 1A STD 400V |
![]() |
VS-50PF40Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 50A DO203AB |
![]() |
SET121219Semtech |
DIODE GEN PURP 1KV 20A MODULE |
![]() |
JANTX1N6642UB2RRoving Networks / Microchip Technology |
DIODE GEN PURP 75V 300MA UB2 |
![]() |
S12GGeneSiC Semiconductor |
DIODE GEN PURP 400V 12A DO4 |