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EPC2012

EPC2012

GANFET N-CH 200V 3A DIE

EPC2012

EPC2012

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Part No :

EPC2012

Manufacturer
EPC
Description
GANFET N-CH 200V 3A DIE
Catalog
Transistors - FETs, MOSFETs - Single
Availability
066106 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 17 - Feb 21 2025
PDF
EPC2012 PDF
Type Description
Series:eGaN®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Discontinued at Digi-Key
FET Type:N-Channel
Technology:GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:100mOhm @ 3A, 5V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:1.8 nC @ 5 V
Vgs (Max):+6V, -5V
Input Capacitance (Ciss) (Max) @ Vds:145 pF @ 100 V
FET Feature:-
Power Dissipation (Max):-
Operating Temperature:-40°C ~ 125°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Die
Package / Case:Die
EPC2012 is available at GangBo-ic.com, Please review product page below for detailed information, including EPC2012 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for EPC2012 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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