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EPC2110

EPC2110

Image is for reference, please contact us to get the real picture

Part No :

EPC2110

Manufacturer
EPC
Description
GANFET 2NCH 120V 3.4A DIE
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
17501 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 27 - Jul 01 2024
PDF
EPC2110 PDF
Type Description
Series:eGaN®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Dual) Common Source
FET Feature:GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):120V
Current - Continuous Drain (Id) @ 25°C:3.4A
Rds On (Max) @ Id, Vgs:60mOhm @ 4A, 5V
Vgs(th) (Max) @ Id:2.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs:0.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:80pF @ 60V
Power - Max:-
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:-
Package / Case:Die
Supplier Device Package:Die
EPC2110 is available at GangBo-ic.com, Please review product page below for detailed information, including EPC2110 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for EPC2110 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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