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EPC2110ENGRT

EPC2110ENGRT

GAN TRANS 2N-CH 120V BUMPED DIE

EPC2110ENGRT

EPC2110ENGRT

Image is for reference, please contact us to get the real picture

Part No :

EPC2110ENGRT

Manufacturer
EPC
Description
GAN TRANS 2N-CH 120V BUMPED DIE
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
279727 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 22 - Sep 26 2024
PDF
EPC2110ENGRT PDF
Type Description
Series:eGaN®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Dual) Common Source
FET Feature:GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):120V
Current - Continuous Drain (Id) @ 25°C:3.4A
Rds On (Max) @ Id, Vgs:60mOhm @ 4A, 5V
Vgs(th) (Max) @ Id:2.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs:0.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:80pF @ 60V
Power - Max:-
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:Die
Supplier Device Package:Die
EPC2110ENGRT is available at GangBo-ic.com, Please review product page below for detailed information, including EPC2110ENGRT price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for EPC2110ENGRT to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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