MOSFET 4N-CH 10.6V 0.08A 16SOIC
Type | Description |
---|---|
Series: | EPAD®, Zero Threshold™ |
Package: | Tube |
Part Status: | Active |
FET Type: | 4 N-Channel, Matched Pair |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 10.6V |
Current - Continuous Drain (Id) @ 25°C: | 80mA |
Rds On (Max) @ Id, Vgs: | - |
Vgs(th) (Max) @ Id: | 20mV @ 10µA |
Gate Charge (Qg) (Max) @ Vgs: | - |
Input Capacitance (Ciss) (Max) @ Vds: | - |
Power - Max: | 500mW |
Operating Temperature: | 0°C ~ 70°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 16-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 16-SOIC |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
DMN2011UFX-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 20V 12.2A DFN2050-4 |
|
BSZ076N06NS3GRochester Electronics |
OPTLMOS N-CHANNEL POWER MOSFET |
|
FDI9406Rochester Electronics |
110A, 40V, N CHANNEL, MOSFET, T |
|
NVMFD5C446NLWFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 40V 145A S08FL |
|
BSG0810NDIATMA1IR (Infineon Technologies) |
MOSFET 2N-CH 25V 19A/39A 8TISON |
|
ALD1106PBLAdvanced Linear Devices, Inc. |
MOSFET 4N-CH 10.6V 14DIP |
|
NX6020CAKSXRochester Electronics |
NX6020CAKS - 60V/50V, 170MA /160 |
|
DMC2041UFDB-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N/P-CH 20V 6UDFN |
|
SI3932DV-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 30V 3.7A 6-TSOP |
|
MCH6626-TL-ERochester Electronics |
PCH+NCH 2.5V DRIVE SERIES |
|
DMC2041UFDB-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N/P-CH 20V 6UDFN |
|
BSM300D12P2E001ROHM Semiconductor |
MOSFET 2N-CH 1200V 300A |
|
SH8M24TB1ROHM Semiconductor |
MOSFET N/P-CH 45V 4.5A/3.5A SOP8 |