MOSFET 2N-CH 20V 7.6A 8-SOIC
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 7.6A |
Rds On (Max) @ Id, Vgs: | 23mOhm @ 7.6A, 10V |
Vgs(th) (Max) @ Id: | 1.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 12.5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 630pF @ 15V |
Power - Max: | 2W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SQJ912AEP-T1_GE3Vishay / Siliconix |
MOSFET 2N-CH 40V 30A PPAK SO-8 |
|
RFP30N6LER4541Rochester Electronics |
30A, 60V, LOGIC LEVEL N CHANNEL |
|
TT8M3TRROHM Semiconductor |
MOSFET N/P-CH 20V 2.5A TSST8 |
|
FS70UMJ-06FRochester Electronics |
70A, 60V, N-CHANNEL MOSFET |
|
ALD1116PALAdvanced Linear Devices, Inc. |
MOSFET 2N-CH 10.6V 8DIP |
|
NTMD2C02R2SGRochester Electronics |
P-CHANNEL POWER MOSFET |
|
FF3MR12KM1PHOSA1IR (Infineon Technologies) |
MEDIUM POWER 62MM |
|
FDMA3023PZSanyo Semiconductor/ON Semiconductor |
MOSFET 2P-CH 30V 2.9A 6MICROFET |
|
DMP31D7LDW-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 25V-30V SOT363 |
|
ALD1110EPALAdvanced Linear Devices, Inc. |
MOSFET 2N-CH 10V 8DIP |
|
FDMS7700SSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V 12A/22A POWER56 |
|
ALD212902SALAdvanced Linear Devices, Inc. |
MOSFET 2N-CH 10.6V 0.08A 8SOIC |
|
FDMA1032CZSanyo Semiconductor/ON Semiconductor |
MOSFET N/P-CH 20V MICROFET 2X2 |