GANFET N-CH 80V 18A DIE
Type | Description |
---|---|
Series: | Automotive, AEC-Q101, eGaN® |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): | 80 V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Rds On (Max) @ Id, Vgs: | 17mOhm @ 11A, 5V |
Vgs(th) (Max) @ Id: | 2.5V @ 3mA |
Gate Charge (Qg) (Max) @ Vgs: | 4 nC @ 5 V |
Vgs (Max): | +5.75V, -4V |
Input Capacitance (Ciss) (Max) @ Vds: | 415 pF @ 50 V |
FET Feature: | - |
Power Dissipation (Max): | - |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | Die Outline (6-Solder Bar) |
Package / Case: | Die |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IXTH6N150Wickmann / Littelfuse |
MOSFET N-CH 1500V 6A TO247 |
|
NDT3055LRochester Electronics |
FET 60V 1.0 MOHM SOT223 |
|
BSP296L6433Rochester Electronics |
SMALL-SIGNAL N-CHANNEL MOSFET |
|
IRLR7833IR (Infineon Technologies) |
MOSFET N-CH 30V 140A DPAK |
|
SI1308EDL-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 1.4A SOT323 |
|
TSM025NB04LCR RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 40V 24A/161A 8PDFN |
|
HUF75343G3Rochester Electronics |
MOSFET N-CH 55V 75A TO247-3 |
|
BSH103,215Nexperia |
MOSFET N-CH 30V 850MA TO236AB |
|
STB141NF55STMicroelectronics |
MOSFET N-CH 55V 80A D2PAK |
|
FQB4N80TMRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 3 |
|
TK8A65D(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 8A TO220SIS |
|
FQPF8P10Rochester Electronics |
MOSFET P-CH 100V 5.3A TO220F |
|
DMN2020UFCL-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 9A X1-DFN1616-6 |