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TK31V60W,LVQ

TK31V60W,LVQ

MOSFET N-CH 600V 30.8A 4DFN

TK31V60W,LVQ

TK31V60W,LVQ

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Part No :

TK31V60W,LVQ

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET N-CH 600V 30.8A 4DFN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
788078 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
PDF
TK31V60W,LVQ PDF
Type Description
Series:DTMOSIV
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:30.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:98mOhm @ 15.4A, 10V
Vgs(th) (Max) @ Id:3.7V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs:86 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:3000 pF @ 300 V
FET Feature:Super Junction
Power Dissipation (Max):240W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:4-DFN-EP (8x8)
Package / Case:4-VSFN Exposed Pad
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