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TPH3206LDGB

TPH3206LDGB

GANFET N-CH 650V 16A PQFN

TPH3206LDGB

TPH3206LDGB

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Part No :

TPH3206LDGB

Manufacturer
Transphorm
Description
GANFET N-CH 650V 16A PQFN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
527552 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 25 - Nov 29 2024
PDF
TPH3206LDGB PDF
Type Description
Series:-
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:16A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:180mOhm @ 11A, 8V
Vgs(th) (Max) @ Id:2.6V @ 500µA
Gate Charge (Qg) (Max) @ Vgs:9.3 nC @ 4.5 V
Vgs (Max):±18V
Input Capacitance (Ciss) (Max) @ Vds:760 pF @ 480 V
FET Feature:-
Power Dissipation (Max):81W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PQFN (8x8)
Package / Case:3-PowerDFN
TPH3206LDGB is available at GangBo-ic.com, Please review product page below for detailed information, including TPH3206LDGB price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for TPH3206LDGB to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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