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TP65H070LDG

TP65H070LDG

GANFET N-CH 650V 25A 3PQFN

TP65H070LDG

TP65H070LDG

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Part No :

TP65H070LDG

Manufacturer
Transphorm
Description
GANFET N-CH 650V 25A 3PQFN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10673 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 25 - Nov 29 2024
Type Description
Series:TP65H070L
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:25A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:85mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:4.8V @ 700µA
Gate Charge (Qg) (Max) @ Vgs:9.3 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:600 pF @ 400 V
FET Feature:-
Power Dissipation (Max):96W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:3-PQFN (8x8)
Package / Case:3-PowerDFN
TP65H070LDG is available at GangBo-ic.com, Please review product page below for detailed information, including TP65H070LDG price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for TP65H070LDG to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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