MOSFET N-CH 20V 7.9A 6UDFN
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20 V |
Current - Continuous Drain (Id) @ 25°C: | 7.9A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs: | 25mOhm @ 4A, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 18 nC @ 8 V |
Vgs (Max): | ±8V |
Input Capacitance (Ciss) (Max) @ Vds: | 907 pF @ 10 V |
FET Feature: | - |
Power Dissipation (Max): | 660mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | U-DFN2020-6 (Type F) |
Package / Case: | 6-UDFN Exposed Pad |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
AOTF22N50LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 500V 22A TO220-3F |
|
STI6N62K3STMicroelectronics |
MOSFET N-CH 620V 5.5A I2PAK |
|
SIHD6N65ET1-GE3Vishay / Siliconix |
MOSFET N-CH 650V 7A TO252AA |
|
SIDR402DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 64.6A/100A PPAK |
|
CSD19538Q2Texas Instruments |
MOSFET N-CH 100V 14.4A 6WSON |
|
IPB010N06NATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 45A/180A TO263-7 |
|
AOB409LAlpha and Omega Semiconductor, Inc. |
MOSFET P-CH 60V 5A/31.5A TO263 |
|
RJK5030DPP-M0#T2Renesas Electronics America |
MOSFET N-CH 500V 5A TO220FL |
|
DMN62D0UW-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 340MA SOT323 |
|
FDPF10N50FTSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 9A TO220F |
|
STD28P3LLH6AGSTMicroelectronics |
MOSFET P-CH 30V 12A DPAK |
|
SIR882ADP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 100V 60A PPAK SO-8 |
|
DMG3406L-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 3.6A SOT23 |