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XPW4R10ANB,L1XHQ

XPW4R10ANB,L1XHQ

MOSFET N-CH 100V 70A AEC-Q101

XPW4R10ANB,L1XHQ

XPW4R10ANB,L1XHQ

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Part No :

XPW4R10ANB,L1XHQ

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET N-CH 100V 70A AEC-Q101
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 18 - Feb 22 2025
Type Description
Series:Automotive, AEC-Q101
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:70A
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:4.1mOhm @ 35A, 10V
Vgs(th) (Max) @ Id:3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:75 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4970 pF @ 10 V
FET Feature:Standard
Power Dissipation (Max):170W (Tc)
Operating Temperature:-55°C ~ 175°C
Mounting Type:Surface Mount
Supplier Device Package:8-DSOP Advance
Package / Case:8-PowerVDFN
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