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XK1R9F10QB,LXGQ

XK1R9F10QB,LXGQ

MOSFET N-CH 100V 160A TO220SM

XK1R9F10QB,LXGQ

XK1R9F10QB,LXGQ

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Part No :

XK1R9F10QB,LXGQ

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET N-CH 100V 160A TO220SM
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11537 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 25 - Nov 29 2024
Type Description
Series:U-MOSX-H
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:160A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:1.92mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:184 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1150 pF @ 10 V
FET Feature:-
Power Dissipation (Max):375W (Tc)
Operating Temperature:175°C
Mounting Type:Surface Mount
Supplier Device Package:TO-220SM(W)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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