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SQ2315ES-T1_GE3

SQ2315ES-T1_GE3

MOSFET P-CH 12V 5A SOT23-3

SQ2315ES-T1_GE3

SQ2315ES-T1_GE3

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Part No :

SQ2315ES-T1_GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET P-CH 12V 5A SOT23-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11202 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
SQ2315ES-T1_GE3 PDF
Type Description
Series:Automotive, AEC-Q101, TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):12 V
Current - Continuous Drain (Id) @ 25°C:5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:50mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:870 pF @ 4 V
FET Feature:-
Power Dissipation (Max):2W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
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